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SemiWell Semiconductor
SCN2C60
Symbol
2. Gate

Sensitive Gate Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 1.5 A ) Low On-State Voltage (1.2V(Typ.)@ITM)
Ratings
600
3. Anode
1. Cathode
TO-92
General Description
Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits.
Absolute Maximum Ratings
Symbol
VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Units
V A A A A 2s W W A V C C
Parameter
Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature
Half Sine Wave : TC = 45 C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms
TA=25C, Pulse Width 1.0 TA=25C, t = 8.3ms
1.0 1.5 15 0.9 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150
Oct, 2002. Rev. 2
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
SCN2C60
Electrical Characteristics
Symbol Items
( TC = 25 C unless otherwise noted )
Conditions
VAK = VDRM or VRRM ; RGK = 1000 TC = 25 C TC = 125 C ( ITM =3 A, Peak ) VAK = 6 V, RL=100
Ratings Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State Current Peak On-State Voltage (1)

1.2
10 200 1.7
VTM
V
IGT
Gate Trigger Current (2)
TC = 25 C TC = - 40 C VD = 7 V, RL=100

200 500
VGT
Gate Trigger Voltage (2)
TC = 25 C TC = - 40 C VAK = 12 V, RL=100 TC = 125 C VGM = 0.67VDRM, Exponential waveform , RGK = 1000 TJ = 125 C ITM = 3A, Ig = 10mA VAK = 12 V, Gate Open
0.2

0.8 1.2
V
VGD
Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current
V
dv/dt
200
V/
di/dt
50
A/
IH
Holding Current
TC = 25 C TC = - 40 C Junction to case Junction to Ambient

2
5.0 10 50 160
mA
Rth(j-c) Rth(j-a)
Thermal Impedance Thermal Impedance
C/W C/W
Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. Does not include RGK in measurement.
2/5
SCN2C60
Fig 1. Gate Characteristics
140
10
1
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ oC]
120 100
VGM (5V)
Gate Voltage [V]
PGM (2W)
= 180
80 60 40 20
o
IGM (1A)
10
0
PG(AV) (0.1W) 25

360
2
VGD(0.2V)
10
-1
0 0.0
: Conduction Angle
10
-1
10
0
10
1
10
2
10
3
10
4
0.2
0.4
0.6
0.8
1.0
1.2
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
1
Fig 4. Thermal Response
TJ = 125 C
1
o
TJ = 25 C
0.1
o
Transient Thermal Impedance [Normalized]
Instantaneous On-State Current [A]
0.1
0.01 0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01 -1 10
10
0
10
1
10
2
10
3
10
4
Instantaneous On-State Voltage [V]
Time (msec)
Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature
1.5
2.0
Fig 6. Typical Gate Trigger Current vs. Junction Temperature
1.6
VGT (25 oC)
IGT (25 C)
VGT (t C)
IGT (t C)
o
1.0
o
o
1.2
0.8
0.4
0.5 -50
0
50
100
o
150
0.0 -50
0
50
100
o
150
Junction Temperature [ C]
Junction Temperature [ C]
3/5
SCN2C60
Fig 7. Typical Holding Current
10 9 8 7 6
Fig 8. Power Dissipation
2.0
Max. Average Power Dissipation [W]
= 180 = 60
o
o
= 90
o
= 120
o
1.5
Holding Current [mA]
5 4 3
= 30
o
1.0
2
0.5
1 -50 -25 0 25 50 75 100 125 150
0.0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature []
Average On-State Current [A]
4/5
SCN2C60
TO-92 Package Dimension
mm Dim. Min. A B C D E F G H I J 0.33 2.54 2.54 0.48 0.013 4.43 4.43 14.07 Typ. 4.2 3.7 4.83 14.87 0.4 4.83 0.45 0.174 0.174 0.554 Max. Min.
Inch Typ. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 Max.
A
E
B F
C
G 1 D 2 3
1. Cathode 2. Gate 3. Anode
J
H
I
5/5

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